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Gallium nitride
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51	NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Add to Reading List Source URL: cdn.macom.com - Date: 2014-04-11 09:36:35
52	NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-11 09:21:19
53	NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-11 09:17:13
54	NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-22 08:58:19
55	NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-11 09:32:48
56	NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Add to Reading List Source URL: cdn.macom.com Language: English - Date: 2014-04-14 12:40:11
57	High Temperature, High Power RF Life Testing of GaN on SiC RF Power Transistors Brian Barr, Engineering Manager and Dan Burkhard, Quality Manager M/A-COM Technology Solutions RF Power Products Group, Torrance CA Abstract Add to Reading List Source URL: www.macom.com Language: English - Date: 2014-03-04 22:47:38 Semiconductor devices Electronic design Packaging Reliability Semiconductor device fabrication Semiconductors Transistor Gallium nitride Light-emitting diode Chemistry Technology Electronic engineering
58	Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin Add to Reading List Source URL: www.elite-map.techfak.uni-erlangen.de Language: English - Date: 2015-04-14 06:47:39 Fraunhofer Society Laboratories Gallium nitride Silicon carbide Semiconductor device Light-emitting diode Solid Single crystal Gallium Chemistry Matter Nitrides
59	GaN Manifesto John Croteau President and CEO The Path to Mainstream GaN Commercialization Add to Reading List Source URL: www.macom.com Language: English - Date: 2014-05-12 09:10:47 Semiconductor devices Solar cells Gallium nitride Nitrides IQE Gallium arsenide ANADIGICS Light-emitting diode Silicon carbide Chemistry Compound semiconductors Inorganic compounds
60	www.cost.eu/mpns COST Action no.MP1308 20142018 Towards oxide-based electronics Add to Reading List Source URL: w3.cost.eu Language: English - Date: 2014-08-19 10:32:40 Gallium nitride Chemistry Inorganic compounds Vanadium

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