Gallium nitride

Results: 448



#Item
51NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features 

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features 

Add to Reading List

Source URL: cdn.macom.com

- Date: 2014-04-11 09:36:35
    52NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from

    NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from

    Add to Reading List

    Source URL: cdn.macom.com

    Language: English - Date: 2014-04-11 09:21:19
      53NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other

      NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other

      Add to Reading List

      Source URL: cdn.macom.com

      Language: English - Date: 2014-04-11 09:17:13
        54NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from

        NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from

        Add to Reading List

        Source URL: cdn.macom.com

        Language: English - Date: 2014-04-22 08:58:19
          55NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz

          NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz

          Add to Reading List

          Source URL: cdn.macom.com

          Language: English - Date: 2014-04-11 09:32:48
            56NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology

            NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology

            Add to Reading List

            Source URL: cdn.macom.com

            Language: English - Date: 2014-04-14 12:40:11
              57High Temperature, High Power RF Life Testing of GaN on SiC RF Power Transistors Brian Barr, Engineering Manager and Dan Burkhard, Quality Manager M/A-COM Technology Solutions RF Power Products Group, Torrance CA Abstract

              High Temperature, High Power RF Life Testing of GaN on SiC RF Power Transistors Brian Barr, Engineering Manager and Dan Burkhard, Quality Manager M/A-COM Technology Solutions RF Power Products Group, Torrance CA Abstract

              Add to Reading List

              Source URL: www.macom.com

              Language: English - Date: 2014-03-04 22:47:38
              58Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin

              Press Release, April 7, 2015 Elite students from the University of Erlangen met crystal growth experts of Fraunhofer IISB Materials play an indispensible role in our everyday lives. In order to solve key challenges facin

              Add to Reading List

              Source URL: www.elite-map.techfak.uni-erlangen.de

              Language: English - Date: 2015-04-14 06:47:39
              59GaN Manifesto John Croteau President and CEO The Path to Mainstream GaN Commercialization

              GaN Manifesto John Croteau President and CEO The Path to Mainstream GaN Commercialization

              Add to Reading List

              Source URL: www.macom.com

              Language: English - Date: 2014-05-12 09:10:47
              60www.cost.eu/mpns COST Action no.MP1308 20142018 Towards oxide-based electronics

              www.cost.eu/mpns COST Action no.MP1308 20142018 Towards oxide-based electronics

              Add to Reading List

              Source URL: w3.cost.eu

              Language: English - Date: 2014-08-19 10:32:40